Neutral beam processing of semiconductor materials

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Description

This is the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The most important challenge facing the US and global microelectronics industry is to identify and develop the next generation of processing technology to produce device structures with dimensions substantially less than 0.25 microns. This project sought to develop controlled, contamination-free etching techniques that are more selective and less damaging than current methods, which are based on inducing surface chemical reactions by rather crude ion-damage mechanisms. The use of non-charged particle etching and cleaning processes in the production of memory ... continued below

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13 p.

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Cross, J. & Hoffbauer, M. September 1, 1996.

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Description

This is the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The most important challenge facing the US and global microelectronics industry is to identify and develop the next generation of processing technology to produce device structures with dimensions substantially less than 0.25 microns. This project sought to develop controlled, contamination-free etching techniques that are more selective and less damaging than current methods, which are based on inducing surface chemical reactions by rather crude ion-damage mechanisms. The use of non-charged particle etching and cleaning processes in the production of memory and microprocessor chips has been identified by The National Technology Roadmap for Semiconductors as a new manufacturing technique that may aid in the quest for feature sizes of 0.1 micron and lower. The Hyperthermal Neutral Beam Facility at Los Alamos has demonstrated significant improvement over ion-assisted etching in experiments using energetic oxygen and chlorine atoms.

Physical Description

13 p.

Notes

OSTI as DE96015176

Source

  • Other Information: PBD: [1996]

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  • Other: DE96015176
  • Report No.: LA-UR--96-3176
  • Grant Number: W-7405-ENG-36
  • DOI: 10.2172/378896 | External Link
  • Office of Scientific & Technical Information Report Number: 378896
  • Archival Resource Key: ark:/67531/metadc681668

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • September 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • Feb. 25, 2016, 9:50 p.m.

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Cross, J. & Hoffbauer, M. Neutral beam processing of semiconductor materials, report, September 1, 1996; New Mexico. (digital.library.unt.edu/ark:/67531/metadc681668/: accessed December 11, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.