Plasma etching, texturing, and passivation of silicon solar cells

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The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. The authors used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with ... continued below

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7 p.

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Ruby, D.S.; Yang, P.; Zaidi, S.; Brueck, S.; Roy, M. & Narayanan, S. November 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. The authors used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. They also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion.

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7 p.

Notes

OSTI as DE99000545

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  • 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998

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  • Other: DE99000545
  • Report No.: SAND--98-2062C
  • Report No.: CONF-980935--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 304079
  • Archival Resource Key: ark:/67531/metadc681459

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • November 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 13, 2016, 4:25 p.m.

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Ruby, D.S.; Yang, P.; Zaidi, S.; Brueck, S.; Roy, M. & Narayanan, S. Plasma etching, texturing, and passivation of silicon solar cells, article, November 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc681459/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.