Behavior of W and WSi(x) Contact Metallization on n- and p- Type GaN

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Sputter-deposited W-based contacts on p-GaN (N{sub A} {approximately} 10{sup 18} cm{sup {minus}3}) display non-ohmic behavior independent of annealing temperature when measured at 25 C. The transition to ohmic behavior occurs above {approximately} 250 C as more of the acceptors become ionized. The optimum annealing temperature is {approximately} 700 C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to {approximately} 900 C.

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Abernathy, C.R.; Cao, X.A.; Cole, M.W.; Eizenberg, M.; Lothian, J.R.; Pearton, S.J. et al. January 5, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Sputter-deposited W-based contacts on p-GaN (N{sub A} {approximately} 10{sup 18} cm{sup {minus}3}) display non-ohmic behavior independent of annealing temperature when measured at 25 C. The transition to ohmic behavior occurs above {approximately} 250 C as more of the acceptors become ionized. The optimum annealing temperature is {approximately} 700 C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to {approximately} 900 C.

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OSTI as DE00003199

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  • Journal Name: Materials Research Society Internet Journal of Nitride Semiconductor Research

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  • Report No.: SAND99-0016J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3199
  • Archival Resource Key: ark:/67531/metadc681312

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  • January 5, 1999

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  • July 25, 2015, 2:20 a.m.

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  • April 11, 2016, 1:47 p.m.

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Abernathy, C.R.; Cao, X.A.; Cole, M.W.; Eizenberg, M.; Lothian, J.R.; Pearton, S.J. et al. Behavior of W and WSi(x) Contact Metallization on n- and p- Type GaN, article, January 5, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc681312/: accessed December 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.