Heteroepitaxy of perovskite ferroelectrics on silicon: a path to silicon-integrated ferroelectrics

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We have studied the thin-film heteroepitaxy between simple perovskite oxides and Si as it is accomplished with molecular beam epitaxy growth. Interface chemistry and electrostatics play critical roles in determining whether a commensurate interface develops. Submonolayer silicides are the required precursors for the transition to commensurate epitaxial oxide structures in these systems. This approach is illustrated with BaTiO{sub 3}; high crystalline perfection is achieved and resistivities as high as 10{sup 13} ohm-cm can be developed for BaTiO{sub 3} MOS capacitors on (001) Si. The epitaxy is (100)BaTiO{sub 3}//(001)Si with [0001]BaTiO{sub 3} aligned in plane with the polar axis along the ... continued below

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17 p.

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McKee, R.A.; Walker, F.J. & Chisholm, M.F. October 1, 1996.

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We have studied the thin-film heteroepitaxy between simple perovskite oxides and Si as it is accomplished with molecular beam epitaxy growth. Interface chemistry and electrostatics play critical roles in determining whether a commensurate interface develops. Submonolayer silicides are the required precursors for the transition to commensurate epitaxial oxide structures in these systems. This approach is illustrated with BaTiO{sub 3}; high crystalline perfection is achieved and resistivities as high as 10{sup 13} ohm-cm can be developed for BaTiO{sub 3} MOS capacitors on (001) Si. The epitaxy is (100)BaTiO{sub 3}//(001)Si with [0001]BaTiO{sub 3} aligned in plane with the polar axis along the [110] of Si. This epitaxy is dominated by a strong propensity for Ba to order along the [110] of Si during the submonolayer silicide formation. This commensurate heteroepitaxial growth leads to a truly monolithic crystal and attendant properties. 9 figs, 23 refs.

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17 p.

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OSTI as DE96015228

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  • 10. American conference on crystal growth with the 9th international conference on vapor growth and epitaxy, Vail, CO (United States), 4-9 Aug 1996

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  • Other: DE96015228
  • Report No.: CONF-960813--3
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 382418
  • Archival Resource Key: ark:/67531/metadc681232

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  • October 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Jan. 25, 2016, 5:31 p.m.

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McKee, R.A.; Walker, F.J. & Chisholm, M.F. Heteroepitaxy of perovskite ferroelectrics on silicon: a path to silicon-integrated ferroelectrics, article, October 1, 1996; Tennessee. (digital.library.unt.edu/ark:/67531/metadc681232/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.