Gallium self-diffusion in gallium arsenide: A study using isotope heterostructures

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Ga self-diffusion was studied with secondary-ion mass spectroscopy in {sup 69}GaAs/{sup 71}GaAs isotope heterostructures grown by molecular beam epitaxy on GaAs substrates. Results show that the Ga self- diffusion coefficient in intrinsic GaAs can be described accurately with D = (43{+-}25 cm{sup 2}s{sup -1})exp(-4.24{+-}0.06 eV/k{sub B}T) over 6 orders of magnitude between 800 and 1225 C under As-rich condition. Experimental results combined with theoretical calculations strongly suggest Ga vacancy being the dominant native defect controlling the diffusion. No significant doping effects were observed in samples where the substrates were doped with Te up to 4x10{sup 17}cm{sup -3} or Zn up ... continued below

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9 p.

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Wang, Lei; Hsu, L.; Haller, E.E.; Erickson, J.W.; Fischer, A.; Eberl, K. et al. September 1, 1996.

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Ga self-diffusion was studied with secondary-ion mass spectroscopy in {sup 69}GaAs/{sup 71}GaAs isotope heterostructures grown by molecular beam epitaxy on GaAs substrates. Results show that the Ga self- diffusion coefficient in intrinsic GaAs can be described accurately with D = (43{+-}25 cm{sup 2}s{sup -1})exp(-4.24{+-}0.06 eV/k{sub B}T) over 6 orders of magnitude between 800 and 1225 C under As-rich condition. Experimental results combined with theoretical calculations strongly suggest Ga vacancy being the dominant native defect controlling the diffusion. No significant doping effects were observed in samples where the substrates were doped with Te up to 4x10{sup 17}cm{sup -3} or Zn up to 1x10{sup 19}cm{sup -3}.

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9 p.

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OSTI as DE97001218

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  • International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996

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  • Other: DE97001218
  • Report No.: LBL--38349
  • Report No.: CONF-960781--6
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 414607
  • Archival Resource Key: ark:/67531/metadc681172

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  • September 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Aug. 23, 2016, 3:03 p.m.

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Wang, Lei; Hsu, L.; Haller, E.E.; Erickson, J.W.; Fischer, A.; Eberl, K. et al. Gallium self-diffusion in gallium arsenide: A study using isotope heterostructures, article, September 1, 1996; California. (digital.library.unt.edu/ark:/67531/metadc681172/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.