Patterning of GaN in high-density Cl{sub 2}- and BCl{sub 3}-based plasmas

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Fabrication of group-III nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropic profiles, smooth surface morphologies, etch rates often exceeding 1 {micro}m/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as {approximately}1.3 {micro}m/min have been reported in ECR ... continued below

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13 p.

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Shul, R.J.; Briggs, R.D.; Han, J.; Pearton, S.J.; Lee, J.W.; Vartuli, C.B. et al. May 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Fabrication of group-III nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropic profiles, smooth surface morphologies, etch rates often exceeding 1 {micro}m/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as {approximately}1.3 {micro}m/min have been reported in ECR generated ICl plasmas at {minus}150 V dc-bias. In this study, the authors report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl{sub 2}- and BCl{sub 3}-based plasma chemistries.

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13 p.

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OSTI as DE97005366

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  • Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997

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  • Other: DE97005366
  • Report No.: SAND--97-1038C
  • Report No.: CONF-970302--5
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/474932 | External Link
  • Office of Scientific & Technical Information Report Number: 474932
  • Archival Resource Key: ark:/67531/metadc681167

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  • May 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:21 a.m.

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  • April 13, 2016, 4:12 p.m.

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Shul, R.J.; Briggs, R.D.; Han, J.; Pearton, S.J.; Lee, J.W.; Vartuli, C.B. et al. Patterning of GaN in high-density Cl{sub 2}- and BCl{sub 3}-based plasmas, report, May 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc681167/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.