Advances in defect characterizations of semiconductors using positrons

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Description

Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described.

Physical Description

7 p.

Creation Information

Lynn, K.G. & Asoka-Kumar, P. December 31, 1996.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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Authors

  • Lynn, K.G. Washington State Univ., Pullman, WA (United States). Dept. of Physics
  • Asoka-Kumar, P. Brookhaven National Lab., Upton, NY (United States). Dept. of Physics

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Description

Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described.

Physical Description

7 p.

Notes

INIS; OSTI as DE97001552

Source

  • International symposium on control of single particles and its applications, Tokyo (Japan), 11-13 Nov 1996

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Identifier

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  • Other: DE97001552
  • Report No.: BNL--63570
  • Report No.: CONF-9611109--1
  • Grant Number: AC02-76CH00016
  • DOI: 10.2172/425364 | External Link
  • Office of Scientific & Technical Information Report Number: 425364
  • Archival Resource Key: ark:/67531/metadc681101

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • December 31, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • Nov. 10, 2015, 1:21 p.m.

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Lynn, K.G. & Asoka-Kumar, P. Advances in defect characterizations of semiconductors using positrons, report, December 31, 1996; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc681101/: accessed December 15, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.