Interfacial recombination in In(Al)GaAsSb/GaSb thermophotovoltaic cells

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The authors have studied efficient p-on-n homo- (InGaAsSb/GaSb) and heterojunction (InGaAsSb/AlGaAsSb/GaSb) thermophotovoltaic (TPV) cells with respect to the recombination velocity at the cap-layer/emitter interface, S. In both cell types the open-circuit voltage, V{sub oc}, and the short-circuit current, J{sub ac}, have about the same sensitivity to S. The dark current, J{sub 0}, is the most sensitive of all. An examination of the essential factors in the one-dimensional minority-carrier diffusion model shows that under short-circuit conditions, photogenerated electrons diffuse rapidly away from the interface to the junction, whereas under open-circuit conditions, they remain in the emitter for a much longer bulk-recombination ... continued below

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12 p.

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Khalfin, V.B.; Garbuzov, D.Z.; Lee, H.; Taylor, G.C.; Morris, N.; Martinelli, R.U. et al. October 1, 1998.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

The authors have studied efficient p-on-n homo- (InGaAsSb/GaSb) and heterojunction (InGaAsSb/AlGaAsSb/GaSb) thermophotovoltaic (TPV) cells with respect to the recombination velocity at the cap-layer/emitter interface, S. In both cell types the open-circuit voltage, V{sub oc}, and the short-circuit current, J{sub ac}, have about the same sensitivity to S. The dark current, J{sub 0}, is the most sensitive of all. An examination of the essential factors in the one-dimensional minority-carrier diffusion model shows that under short-circuit conditions, photogenerated electrons diffuse rapidly away from the interface to the junction, whereas under open-circuit conditions, they remain in the emitter for a much longer bulk-recombination time, and therefore, they are more likely to recombine at the interface. A factor of 2.2 increase in S from 5 to 11 {times} 10{sup 4} cm/s produces a 25-mV decrease in V{sub oc}, a 12-% decrease in J{sub ac} or quantum efficiency, and a factor of two increase in J{sub 0}. This work points out the critical importance of interfacial recombination even in efficient TPV cells.

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12 p.

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OSTI as DE99001616

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  • 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998

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  • Other: DE99001616
  • Report No.: KAPL-P--000117
  • Report No.: K--98159;CONF-981055--
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 307865
  • Archival Resource Key: ark:/67531/metadc681078

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  • October 1, 1998

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  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 6:27 p.m.

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Khalfin, V.B.; Garbuzov, D.Z.; Lee, H.; Taylor, G.C.; Morris, N.; Martinelli, R.U. et al. Interfacial recombination in In(Al)GaAsSb/GaSb thermophotovoltaic cells, article, October 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc681078/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.