Infrared light emission from semiconductor devices

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We present results using near-infrared (NIR) cameras to study emission of common defect classes for integrated circuits. The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 {mu}m. For comparison, the same set of samples used to characterize the performance of the NIR camera were studied using a non-intensified, liquid-nitrogen-cooled, slow scan CCD camera (with a spectral range 400-1100 nm). Results show that the NIR camera images all of ... continued below

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9 p.

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Barton, D.L.; Tangyunyong, P.; Soden, J.M.; Liang, A.Y.; Low, F.J.; Zaplatin, A.N. et al. October 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We present results using near-infrared (NIR) cameras to study emission of common defect classes for integrated circuits. The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 {mu}m. For comparison, the same set of samples used to characterize the performance of the NIR camera were studied using a non-intensified, liquid-nitrogen-cooled, slow scan CCD camera (with a spectral range 400-1100 nm). Results show that the NIR camera images all of the defect classes studied here with much shorter integration times than the cooled CCD, suggesting that photon emission beyond 1 {mu}m is significantly stronger than at shorter wavelengths.

Physical Description

9 p.

Notes

OSTI as DE96015012

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  • ASM International symposium for testing and failure analysis, Los Angeles, CA (United States), 18-22 Nov 1996

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  • Other: DE96015012
  • Report No.: SAND--96-2218C
  • Report No.: CONF-961180--4
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 390573
  • Archival Resource Key: ark:/67531/metadc681064

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • October 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • April 13, 2016, 2:31 p.m.

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Barton, D.L.; Tangyunyong, P.; Soden, J.M.; Liang, A.Y.; Low, F.J.; Zaplatin, A.N. et al. Infrared light emission from semiconductor devices, article, October 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc681064/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.