Hall effect measurements on proton-irradiated ROSE samples

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Bulk samples obtained from two wafers of a silicon monocrystal material produced by Float-Zone refinement have been analyzed using the four-point probe method. One of the wafers comes from an oxygenated ingot; two sets of pure and oxygenated samples have been irradiated with 24 GeV/c protons in the fluence range from 10{sup 13} p/cm{sup 2} to 2x10{sup 14} p/cm{sup 2}. Van der Pauw resistivity and Hall coefficient have been measured before and after irradiation as a function of the temperature. A thermal treatment (30 minutes at 100C) has been performed to accelerate the reverse annealing effect in the irradiated silicon. ... continued below

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17 p.

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Biggeri, U.; Bruzzi, M. & Borchi, E. January 1, 1997.

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Bulk samples obtained from two wafers of a silicon monocrystal material produced by Float-Zone refinement have been analyzed using the four-point probe method. One of the wafers comes from an oxygenated ingot; two sets of pure and oxygenated samples have been irradiated with 24 GeV/c protons in the fluence range from 10{sup 13} p/cm{sup 2} to 2x10{sup 14} p/cm{sup 2}. Van der Pauw resistivity and Hall coefficient have been measured before and after irradiation as a function of the temperature. A thermal treatment (30 minutes at 100C) has been performed to accelerate the reverse annealing effect in the irradiated silicon. The irradiated samples show the same exponential dependence of the resistivity and of the Hall coefficient on the temperature from 370K to 100K, corresponding to the presence of radiation-induced deep energy levels around 0.6-0.7eV in the silicon gap. The free carrier concentrations (n, p) have been evaluated in the investigated fluence range. The inversion of the conductivity type from n to p occurred respectively at 7x10{sup 13} p/cm{sup 2} and at 4x10{sup 13} p/cm{sup 2} before and after the annealing treatment, for both the two sets. Only slight differences have been detected between the pure and oxygenated samples.

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17 p.

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INIS; OSTI as DE97004064

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  • 2. workshop on radiation hardening of silicon detectors, Geneva (Switzerland), 4-5 Feb 1997

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  • Other: DE97004064
  • Report No.: BNL--64080
  • Report No.: CONF-970257--1
  • Grant Number: AC02-76CH00016
  • Office of Scientific & Technical Information Report Number: 456329
  • Archival Resource Key: ark:/67531/metadc680987

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  • January 1, 1997

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  • July 25, 2015, 2:21 a.m.

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  • Nov. 10, 2015, 12:29 p.m.

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Biggeri, U.; Bruzzi, M. & Borchi, E. Hall effect measurements on proton-irradiated ROSE samples, article, January 1, 1997; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc680987/: accessed August 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.