Key issues in plasma source ion implantation

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Plasma source ion implantation (PSII) is a scaleable, non-line-of-sight method for the surface modification of materials. In this paper, we consider three important issues that should be addressed before wide-scale commercialization of PSII: (1) implant conformality; (2) ion sources; and (3) secondary electron emission. To insure uniform implanted dose over complex shapes, the ion sheath thickness must be kept sufficiently small. This criterion places demands on ion sources and pulsed-power supplies. Another limitation to date is the availability of additional ion species beyond B, C, N, and 0. Possible solutions are the use of metal arc vaporization sources and plasma ... continued below

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21 p.

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Rej, D.J.; Faehl, R.J. & Matossian, J.N. September 1, 1996.

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Description

Plasma source ion implantation (PSII) is a scaleable, non-line-of-sight method for the surface modification of materials. In this paper, we consider three important issues that should be addressed before wide-scale commercialization of PSII: (1) implant conformality; (2) ion sources; and (3) secondary electron emission. To insure uniform implanted dose over complex shapes, the ion sheath thickness must be kept sufficiently small. This criterion places demands on ion sources and pulsed-power supplies. Another limitation to date is the availability of additional ion species beyond B, C, N, and 0. Possible solutions are the use of metal arc vaporization sources and plasma discharges in high-vapor-pressure organometallic precursors. Finally, secondary electron emission presents a potential efficiency and x-ray hazard issue since for many metallurgic applications, the emission coefficient can be as large as 20. Techniques to suppress secondary electron emission are discussed.

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21 p.

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OSTI as DE96011297

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  • Surface coatings and technology conference on ion beam surve technology, Tomsk (Russian Federation), May 1996

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  • Other: DE96011297
  • Report No.: LA-UR--96-1741
  • Report No.: CONF-9605214--1
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 376406
  • Archival Resource Key: ark:/67531/metadc680966

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  • September 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Feb. 25, 2016, 8:02 p.m.

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Rej, D.J.; Faehl, R.J. & Matossian, J.N. Key issues in plasma source ion implantation, article, September 1, 1996; New Mexico. (digital.library.unt.edu/ark:/67531/metadc680966/: accessed August 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.