Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

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GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium and trimethylantimony as the sources. As grown layers are p type with the carrier concentration in the mid 10{sup 16} cm{sup {minus}3} range. N type layers are grown using diethyltellurium as the Te source. Incorporation of Te in high concentration showed compensation and secondary ion mass spectrometry (SIMS) result showed that only 2.5% of Te are active when 2 {times} 10{sup 19} cm{sup {minus}3} of Te was incorporated. The carrier concentration measured in n type samples increases as the ... continued below

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17 p.

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Ehsani, H.; Bhat, I.; Hitchcock, C.; Borrego, J. & Gutmann, R. July 1, 1995.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium and trimethylantimony as the sources. As grown layers are p type with the carrier concentration in the mid 10{sup 16} cm{sup {minus}3} range. N type layers are grown using diethyltellurium as the Te source. Incorporation of Te in high concentration showed compensation and secondary ion mass spectrometry (SIMS) result showed that only 2.5% of Te are active when 2 {times} 10{sup 19} cm{sup {minus}3} of Te was incorporated. The carrier concentration measured in n type samples increases as the temperature is lowered. This is explained by the presence of second band close to the conduction band minima. Silane which is a common n type dopant in GaAs and other III-V systems is shown to behave like p type in GaInSb. P-n junction structures have been grown on GaSb substrates to fabricate TPV cells.

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17 p.

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OSTI as DE99002688

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  • 2. NREL conference on thermophotovoltaic generation of electricity, Colorado Springs, CO (United States), Jul 1995

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  • Other: DE99002688
  • Report No.: KAPL-P--000010
  • Report No.: K--95085;CONF-9507247--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/350941 | External Link
  • Office of Scientific & Technical Information Report Number: 350941
  • Archival Resource Key: ark:/67531/metadc680118

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  • July 1, 1995

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 12:35 p.m.

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Ehsani, H.; Bhat, I.; Hitchcock, C.; Borrego, J. & Gutmann, R. Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy, report, July 1, 1995; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc680118/: accessed July 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.