Surface Stoichiometry, Structure, and Kinetics of GaAs MOCVD

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We have used reflectance-difference spectroscopy (RDS) to examine the surface phases of GaAs(100) during metalorganic chemical vapor deposition (MOCVD). Since the identities of two important surface phases were unknown, we determined their structure and stoichiometry using a variety of surface science techniques. The Type III phase is a newly characterized As-rich (1 X 2)-CH{sub 3} reconstruction. The Type II phase is a metastable derivative of the Type I phase. RDS also indicates that the surface during MOCVD has a considerable degree of heterogeneity. Deposition rates were measured over a similar range of conditions and the kinetically-limited regime was found to ... continued below

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Baucom, K.C.; Creighton, J.R. & Moffat, H.K. January 29, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

We have used reflectance-difference spectroscopy (RDS) to examine the surface phases of GaAs(100) during metalorganic chemical vapor deposition (MOCVD). Since the identities of two important surface phases were unknown, we determined their structure and stoichiometry using a variety of surface science techniques. The Type III phase is a newly characterized As-rich (1 X 2)-CH{sub 3} reconstruction. The Type II phase is a metastable derivative of the Type I phase. RDS also indicates that the surface during MOCVD has a considerable degree of heterogeneity. Deposition rates were measured over a similar range of conditions and the kinetically-limited regime was found to correlate with the Type III phase. A simple kinetic model was found to quantitatively describe the deposition rates.

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  • 194th Meeting of the Electrochemical Society; Boston, MA; 11/01-06/1998

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  • Other: DE00003236
  • Report No.: SAND98-1932C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3236
  • Archival Resource Key: ark:/67531/metadc680104

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  • January 29, 1999

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  • July 25, 2015, 2:20 a.m.

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  • Dec. 2, 2016, 2:46 p.m.

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Baucom, K.C.; Creighton, J.R. & Moffat, H.K. Surface Stoichiometry, Structure, and Kinetics of GaAs MOCVD, article, January 29, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc680104/: accessed September 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.