The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates Metadata
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Title
- Main Title The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates
Creator
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Author: Maneshian, Mohammad HassanCreator Type: Personal
Contributor
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Chair: Shepherd, NigelContributor Type: PersonalContributor Info: Major Professor
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Committee Member: Srivilliputhur, SrinivasanContributor Type: Personal
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Committee Member: Reidy, RickContributor Type: Personal
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Committee Member: Du, JinchengContributor Type: Personal
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Committee Member: Bouanani, Mohammed ElContributor Type: Personal
Publisher
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Name: University of North TexasPlace of Publication: Denton, Texas
Date
- Creation: 2011-05
Language
- English
Description
- Content Description: Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was successfully grown by sublimation of silicon from epitaxy-ready, Si and C terminated, 6H-SiC wafers in high-vacuum and argon atmosphere. The graphene formation was accompanied by a significant enhancement of Ohmic behavior, and, was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy (HRTEM) showed that the interface between the metal and SiC remained sharp and free of macroscopic defects even after 30 min, 1430 °C anneals. The impact of high dielectric constant Al2O3 and its deposition by radio frequency (RF) magnetron sputtering on the structural and electrical properties of MLG is discussed. HRTEM analysis confirms that the Al2O3/MLG interface is relatively sharp and that thickness approximation of the MLG using angle resolved X-ray photoelectron spectroscopy (ARXPS) as well as variable-angle spectroscopic ellipsometry (VASE) is accurate. The totality of results indicate that ARXPS can be used as a nondestructive tool to measure the thickness of MLG, and that RF sputtered Al2O3 can be used as a (high-k) constant gate oxide in multilayer grapheme based transistor applications.
Subject
- Keyword: transistors
- Keyword: Graphene
- Keyword: silicon carbide
Collection
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Name: UNT Theses and DissertationsCode: UNTETD
Institution
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Name: UNT LibrariesCode: UNT
Rights
- Rights Access: public
- Rights License: copyright
- Rights Holder: Maneshian, Mohammad Hassan
- Rights Statement: Copyright is held by the author, unless otherwise noted. All rights reserved.
Resource Type
- Thesis or Dissertation
Format
- Text
Identifier
- Archival Resource Key: ark:/67531/metadc68009
Degree
- Degree Name: Doctor of Philosophy
- Degree Level: Doctoral
- Degree Discipline: Materials Science and Engineering
- Academic Department: Department of Materials Science and Engineering
- Degree Grantor: University of North Texas