End-point process development for low-volume, high reliability tungsten CMP

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Description

A temperature end point method was developed for tungsten CMP (WCMP) processing in the Sandia Microelectronics Development Laboratory (MDL), a facility which develops and prototypes a variety of silicon based devices including ASIC, memory, radiation hardened CMOS and microelectromechanical systems. A large product variety and small production lot size prevents process recipe optimization or standardization for each mask level and product. Rigorous product reliability requirements and prohibitively expensive hardware qualifications essentially require that a single process and consumable set be established for all products, with minimal opportunity for adjustment. A timed process was not suitable without significant potential for manual ... continued below

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6 p.

Creation Information

Merkle, P.B. & Myers, T.L. December 1, 1997.

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  • Merkle, P.B. Sandia National Labs., Albuquerque, NM (United States)
  • Myers, T.L. Cabot Corporation, Aurora, IL (United States). Microelectronics Materials Div.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A temperature end point method was developed for tungsten CMP (WCMP) processing in the Sandia Microelectronics Development Laboratory (MDL), a facility which develops and prototypes a variety of silicon based devices including ASIC, memory, radiation hardened CMOS and microelectromechanical systems. A large product variety and small production lot size prevents process recipe optimization or standardization for each mask level and product. Rigorous product reliability requirements and prohibitively expensive hardware qualifications essentially require that a single process and consumable set be established for all products, with minimal opportunity for adjustment. A timed process was not suitable without significant potential for manual inspections and rework. Over several weeks of processing on an IPEC 472, the temperature end point method gave a 7.7% 1-sigma end point time distribution. This enabled a 50% reduction in daily process qualification wafers, and allowed minimization of yield loss, rework, and oxide erosion.

Physical Description

6 p.

Notes

OSTI as DE98001700

Source

  • VLSI multilevel interconnection conference, Santa Clara, CA (United States), 19-20 Feb 1998

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  • Other: DE98001700
  • Report No.: SAND--97-3136C
  • Report No.: CONF-980215--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 292856
  • Archival Resource Key: ark:/67531/metadc680006

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • December 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • April 13, 2016, 1:43 p.m.

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Merkle, P.B. & Myers, T.L. End-point process development for low-volume, high reliability tungsten CMP, article, December 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc680006/: accessed December 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.