Solutions to Defect-Related Problems in Implanted Silicon by Controlled Injection of Vacancies by High-Energy Ion Irradiation

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Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Pre-amorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted ... continued below

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6 Pages

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Duggan, J.L.; Holland, O.W. & Roth, E. November 4, 1998.

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Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Pre-amorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectroscopy was used to profile the dopant distributions.

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6 Pages

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  • 15th International Conference on the Application of Accelerators in Research and Industry, Denton, TX, Nov. 4-7, 1998

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  • Other: DE00002974
  • Report No.: ORNL/CP-100409
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 2974
  • Archival Resource Key: ark:/67531/metadc679897

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  • November 4, 1998

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  • July 25, 2015, 2:20 a.m.

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  • Nov. 4, 2015, 2:32 p.m.

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Duggan, J.L.; Holland, O.W. & Roth, E. Solutions to Defect-Related Problems in Implanted Silicon by Controlled Injection of Vacancies by High-Energy Ion Irradiation, article, November 4, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc679897/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.