Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems

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Heavily doped Si was investigated for use as spectral control filter in thermal photovoltaic (TPV) system. These filters should reflect radiation at 4 {micro}m and above and transmit radiation at 2 {micro}m and below. Two approaches have been used for introducing impurities into Si to achieve high doping concentration. One was the diffusion technique, using spin-on dopants. The plasma wavelength ({lambda}{sub p}) of these filters could be adjusted by controlling the diffusion conditions. The minimum plasma wavelength achieved was 4.8 {micro}m. In addition, a significant amount of absorption was observed for the wavelength 2 {micro}m and below. The second approach ... continued below

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[50] p.

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Ehsani, H.; Bhat, I.; Borrego, J.; Gutmann, R.; Brown, E.; Dzeindziel, R. et al. July 1, 1995.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Heavily doped Si was investigated for use as spectral control filter in thermal photovoltaic (TPV) system. These filters should reflect radiation at 4 {micro}m and above and transmit radiation at 2 {micro}m and below. Two approaches have been used for introducing impurities into Si to achieve high doping concentration. One was the diffusion technique, using spin-on dopants. The plasma wavelength ({lambda}{sub p}) of these filters could be adjusted by controlling the diffusion conditions. The minimum plasma wavelength achieved was 4.8 {micro}m. In addition, a significant amount of absorption was observed for the wavelength 2 {micro}m and below. The second approach was doping by ion implantation followed by thermal annealing with a capped layer of doped glass. Implantation with high dosage of B and As followed by high temperature annealing (> 1,000 C) resulted in a plasma wavelength that could be controlled between 3.5 and 6 {micro}m. The high temperature annealing (> 1,000 C) that was necessary to activate the dopant atoms and to heal the implantation damage, also caused significant absorption at 2 {micro}m. For phosphorus implanted Si, a moderate temperature (800--900 C) was sufficient to activate most of the phosphorus and to heal the implantation damage. The position of the plasma turn-on wavelength for an implantation dose of 2 {times} 10{sup 16} cm{sup {minus}2} of P was at 2.9 {micro}m. The absorption at 2 {micro}m was less than 20% and the reflection at 5 {micro}m was about 70%.

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[50] p.

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OSTI as DE99002690

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  • 2. NREL conference on thermophotovoltaic generation of electricity, Colorado Springs, CO (United States), Jul 1995

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  • Other: DE99002690
  • Report No.: KAPL-P--000011
  • Report No.: K--95086;CONF-9507247--
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 350893
  • Archival Resource Key: ark:/67531/metadc679660

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  • July 1, 1995

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  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 12:35 p.m.

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Ehsani, H.; Bhat, I.; Borrego, J.; Gutmann, R.; Brown, E.; Dzeindziel, R. et al. Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems, article, July 1, 1995; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc679660/: accessed October 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.