Total ionizing dose effects on MOS and bipolar devices in the natural space radiation environment

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Description

Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature and/or elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics from this phenomenon.

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8 pages

Creation Information

Fleetwood, D. M. December 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 49 times , with 8 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature and/or elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics from this phenomenon.

Physical Description

8 pages

Notes

INIS; OSTI as DE00291135

Source

  • 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, Takasaki (JP), 10/12/1998--10/13/1998; Other Information: Supercedes report DE99000996

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  • Other: DE99000996
  • Report No.: SAND--98-2040C
  • Report No.: ON:DE99000996
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/10160345 | External Link
  • Office of Scientific & Technical Information Report Number: 291135
  • Archival Resource Key: ark:/67531/metadc679653

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • December 1998

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  • July 25, 2015, 2:20 a.m.

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  • April 14, 2016, 7:10 p.m.

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Fleetwood, D. M. Total ionizing dose effects on MOS and bipolar devices in the natural space radiation environment, article, December 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc679653/: accessed October 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.