Competition between gettering by implantation-induced cavities in silicon and internal gettering associated with SiO{sub 2} precipitation

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Dissolved or metallic impurities can degrade silicon integrated circuit (IC) device yields when present in the near surface, active device region. This is such a critical issue that the IC community has set specifications for the reduction of metallic impurities down to 2.5 {times} 10{sup 9} atoms/cm{sup 3}. The exceptionally high diffusivity and solubility of Cu and Fe in silicon and their presence in many processing tools makes these impurities of particular interest. Additionally, Cu is being considered as an interconnect material because of its low electrical resistivity which creates a high potential for contamination. Here, the gettering behavior of ... continued below

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8 p.

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McHugo, S.A.; Weber, E.R.; Myers, S.M. & Petersen, G.A. December 31, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Dissolved or metallic impurities can degrade silicon integrated circuit (IC) device yields when present in the near surface, active device region. This is such a critical issue that the IC community has set specifications for the reduction of metallic impurities down to 2.5 {times} 10{sup 9} atoms/cm{sup 3}. The exceptionally high diffusivity and solubility of Cu and Fe in silicon and their presence in many processing tools makes these impurities of particular interest. Additionally, Cu is being considered as an interconnect material because of its low electrical resistivity which creates a high potential for contamination. Here, the gettering behavior of Cu and Fe was investigated in CZ silicon which contained both internal-gettering sites in the bulk due to SiO{sub 2} precipitation and a device-side layer of cavities formed by He implantation and annealing. The objective was to quantify the effectiveness of impurity gettering at cavities relative to the widely used internal-gettering process. Both rapid thermal anneals and furnace anneals were used during the gettering sequences to reveal transient effects as well as the final, thermodynamically-equilibrated condition. For temperatures of 700, 800 and 850 C, the cavity gettering was observed to predominate over internal gettering as indicated both by the number of gettered atoms in the cavities and the residual solution concentration in the device region. The results are interpreted in detail by numerically solving the diffusion equation with sink-related source terms based on earlier, fundamental studies of the underlying mechanisms of internal and cavity gettering.

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8 p.

Notes

OSTI as DE97001934

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  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE97001934
  • Report No.: SAND--96-1719C
  • Report No.: CONF-961202--47
  • Grant Number: AC04-94AL85000;AC03-76SF00098
  • DOI: 10.2172/432984 | External Link
  • Office of Scientific & Technical Information Report Number: 432984
  • Archival Resource Key: ark:/67531/metadc679454

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  • December 31, 1996

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  • July 25, 2015, 2:20 a.m.

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  • April 14, 2016, 8:19 p.m.

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McHugo, S.A.; Weber, E.R.; Myers, S.M. & Petersen, G.A. Competition between gettering by implantation-induced cavities in silicon and internal gettering associated with SiO{sub 2} precipitation, report, December 31, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc679454/: accessed October 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.