Charge Accumulation at a Threading Edge Dislocation in GaN

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We have performed Monte Carlo calculations to determine the charge accumulation on threading edge dislocations in GaN as a function of the dislocation density and background dopant density. Four possible core structures have been examined, each of which produces defect levels in the gap and may therefore act as electron or hole traps. Our results indicate that charge accumulation, and the resulting electrostatic interactions, can change the relative stabilities of the different core structures. Structures having Ga and N vacancies at the dislocation core are predicted to be stable under nitrogen-rich and gallium-rich growth conditions, respectively. Due to dopant depletion ... continued below

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Leung, K.; Stechel, E.B. & Wright, A.F. January 20, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

We have performed Monte Carlo calculations to determine the charge accumulation on threading edge dislocations in GaN as a function of the dislocation density and background dopant density. Four possible core structures have been examined, each of which produces defect levels in the gap and may therefore act as electron or hole traps. Our results indicate that charge accumulation, and the resulting electrostatic interactions, can change the relative stabilities of the different core structures. Structures having Ga and N vacancies at the dislocation core are predicted to be stable under nitrogen-rich and gallium-rich growth conditions, respectively. Due to dopant depletion at high dislocation density and the multitude of charge states, the line charge exhibits complex crossover behavior as the dopant and dislocation densities vary.

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  • Journal Name: Applied Physics Letters

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  • Other: DE00003214
  • Report No.: SAND99-0123J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1063/1.123018 | External Link
  • Office of Scientific & Technical Information Report Number: 3214
  • Archival Resource Key: ark:/67531/metadc679447

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  • January 20, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • Dec. 2, 2016, 9:13 p.m.

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Leung, K.; Stechel, E.B. & Wright, A.F. Charge Accumulation at a Threading Edge Dislocation in GaN, article, January 20, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc679447/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.