Ternary and quaternary antimonide devices for thermophotovoltaic applications Page: 4 of 47
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Ternary and Quaternary Antimonide Devices
for Thermophotovoltaic Applications
C.W. Hitchcock, R.J. Gutmann, H. Ehsani, I.B. Bhat
Center for Integrated Electronics and Electronics Manufacturing
Rensselaer Polytechnic Institute, Troy, NY 12180-3590
Lincoln Laboratory, Massachusetts Institute of Technology
. M.J. Freeman and G.W. Charache
Lockheed Martin, Inc., Schenectady, NY 12301
Thermophotovoltaic (TPV) devices have been fabricated using epi-
taxial ternary and quaternary layers grown on GaSb substrates. GaInSb
ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE)
with buffer layers to accommodate the lattice mismatch, and GaInAsSb
lattice-matched quaternaries were grown by MOVPE and by liquid
phase epitaxy (LPE). Improved devices are obtained when optical
absorption occurs in the p-layer due to the longer minority carrier
diffusion length. Thick emitter p/n devices are limited by surface re-
combination, with highest quantum efficiency and lowest dark current
being achieved with epitaxially grown surface passivation layers on
lattice-matched MOVPE quaternaries. Thin emitter/thick base n/p
devices are very promising, but require improved shallow high-quality
n-type ohmic contacts.
Thermophotovoltaic (TPV) devices are being explored for a variety of terres-
trial and space applications [1-4]. The systems approach has been to use sil-
icon devices matched to selective emitters or design low-band gap compound
semiconductor cells matched to blackbody emitters. This paper presents re-
sults of epitaxial devices on GaSb substrates for TPV applications requiring
band gap energies near 0.55 eV, focusing on electrical parameters achieved
with different epitaxial growth techniques and alternative device structures.
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Hitchcock, C.W.; Gutmann, R.J.; Ehsani, H.; Bhat, I.B.; Wang, C.A.; Freeman, M.J. et al. Ternary and quaternary antimonide devices for thermophotovoltaic applications, report, June 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc679446/m1/4/: accessed December 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.