Ternary and quaternary antimonide devices for thermophotovoltaic applications

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Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE and by liquid phase epitaxy (LPE). Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base ... continued below

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[50] p.

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Hitchcock, C.W.; Gutmann, R.J.; Ehsani, H.; Bhat, I.B.; Wang, C.A.; Freeman, M.J. et al. June 1, 1998.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 18 times . More information about this report can be viewed below.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE and by liquid phase epitaxy (LPE). Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts.

Physical Description

[50] p.

Notes

OSTI as DE99001572

Source

  • 9. international conference on MOVPE, La Jolla, CA (United States), 30 May - 4 Jun 1998

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  • Other: DE99001572
  • Report No.: KAPL-P--000083
  • Report No.: K--98073;CONF-9805146--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/307840 | External Link
  • Office of Scientific & Technical Information Report Number: 307840
  • Archival Resource Key: ark:/67531/metadc679446

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  • June 1, 1998

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  • July 25, 2015, 2:20 a.m.

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  • May 18, 2016, 2:34 p.m.

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Hitchcock, C.W.; Gutmann, R.J.; Ehsani, H.; Bhat, I.B.; Wang, C.A.; Freeman, M.J. et al. Ternary and quaternary antimonide devices for thermophotovoltaic applications, report, June 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc679446/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.