Electrical and optical properties of degenerately doped N-type In{sub x}Ga{sub 1{minus}x}As

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Degenerately-doped (> 10{sup 19} cm{sup {minus}3}) n-type In{sub x}Ga{sub 1{minus}x}As (x > 0.53) possesses a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of this material and the demonstrated ability to incorporate n-type dopants into the mid-10{sup 19} cm{sup {minus}3} range, both the Moss-Burnstein bandgap shift and plasma reflection characteristics are particularly dramatic. These properties are investigated for In{sub x}Ga{sub 1{minus}x}As as a function of doping concentration, dopant type, and growth conditions. For undoped InGaAs with a nominal bandgap of 0.6 eV, doping this material ... continued below

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12 p.

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Charache, G.W.; DePoy, D.M. & Egley, J.L. May 1, 1997.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Degenerately-doped (> 10{sup 19} cm{sup {minus}3}) n-type In{sub x}Ga{sub 1{minus}x}As (x > 0.53) possesses a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of this material and the demonstrated ability to incorporate n-type dopants into the mid-10{sup 19} cm{sup {minus}3} range, both the Moss-Burnstein bandgap shift and plasma reflection characteristics are particularly dramatic. These properties are investigated for In{sub x}Ga{sub 1{minus}x}As as a function of doping concentration, dopant type, and growth conditions. For undoped InGaAs with a nominal bandgap of 0.6 eV, doping this material to 5 {times} 10{sup 19} cm{sup {minus}3} increased the effective optical bandgap to 1.1 eV and has a plasma turn-on wavelength of 5 microns. This filter was coupled to a non-absorbing interference filter, creating a functional tandem filter for thermophotovoltaic applications.

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12 p.

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OSTI as DE99001902

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  • 3. NREL conference on thermophotovoltaic (TPV) generation of electricity, Colorado Springs, CO (United States), 18-21 May 1997

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  • Other: DE99001902
  • Report No.: KAPL-P--000169
  • Report No.: K--97053;CONF-9705119--
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 319789
  • Archival Resource Key: ark:/67531/metadc679274

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  • May 1, 1997

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  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 6:23 p.m.

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Charache, G.W.; DePoy, D.M. & Egley, J.L. Electrical and optical properties of degenerately doped N-type In{sub x}Ga{sub 1{minus}x}As, article, May 1, 1997; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc679274/: accessed November 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.