Cross-Sectional Scanning Tunneling Microscopy of InAsSb/InAsP Superlattices

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Cross-sectional scanning tunneling microscopy has been used to characterize compositional structure in InAs{sub 0.87}Sb{sub 0.13}/InAs{sub 0.73}P{sub 0.27} and InAs{sub 0.83}Sb{sub 0.17}/InAs{sub 0.60}P{sub 0.40} strained-layer superlattice structures grown by metal-organic chemical vapor deposition. High-resolution STM images of the (110) cross section reveal compositional features within both the InAs{sub x}Sb{sub 1{minus}x} and InAs{sub y}P{sub 1{minus}y} alloy layers oriented along the [{bar 1}12] and [1{bar 1}2] directions--the same as those in which features would be observed for CuPt-B type ordered alloys. Typically one variant dominates in a given area, although occasionally the coexistence of both variants is observed. Furthermore, such features in the ... continued below

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17 p.

Creation Information

Allerman, A.A.; Biefeld, R.M.; Yu, E.T. & Zuo, S.L. February 10, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Cross-sectional scanning tunneling microscopy has been used to characterize compositional structure in InAs{sub 0.87}Sb{sub 0.13}/InAs{sub 0.73}P{sub 0.27} and InAs{sub 0.83}Sb{sub 0.17}/InAs{sub 0.60}P{sub 0.40} strained-layer superlattice structures grown by metal-organic chemical vapor deposition. High-resolution STM images of the (110) cross section reveal compositional features within both the InAs{sub x}Sb{sub 1{minus}x} and InAs{sub y}P{sub 1{minus}y} alloy layers oriented along the [{bar 1}12] and [1{bar 1}2] directions--the same as those in which features would be observed for CuPt-B type ordered alloys. Typically one variant dominates in a given area, although occasionally the coexistence of both variants is observed. Furthermore, such features in the alloy layers appear to be correlated across heterojunction interfaces in a manner that provides support for III-V alloy ordering models which suggest that compositional order can arise from strain-induced order near the surface of an epitaxially growing crystal. Finally, atomically resolved (1{bar 1}0) images obtained from the InAs{sub 0.87}Sb{sub 0.13}/InAs{sub 0.73}P{sub 0.27} sample reveal compositional features in the [112] and [{bar 1}{bar 1}2] directions, i.e., those in which features would be observed for CuPt-A type ordering.

Physical Description

17 p.

Notes

OSTI as DE00003568

Medium: P; Size: 17 pages

Source

  • 26th Conference on Physics and Chemistry of Semiconductor Interfaces, San Diego, CA (US), 01/17/1999--01/21/1999

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  • Report No.: SAND98-2507C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3568
  • Archival Resource Key: ark:/67531/metadc678933

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  • February 10, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 7, 2017, 3:33 p.m.

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Allerman, A.A.; Biefeld, R.M.; Yu, E.T. & Zuo, S.L. Cross-Sectional Scanning Tunneling Microscopy of InAsSb/InAsP Superlattices, article, February 10, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc678933/: accessed September 26, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.