Gettering of transition metals by cavities in silicon formed by helium ion implantation

PDF Version Also Available for Download.

Description

We have recently completed studies which quantitatively characterize the ability of nanometer-size cavities formed by He ion implantation to getter detrimental metal impurities in Si. Cavity microstructures formed in Si by ion implantation of He and subsequent annealing have been found to capture metal impurities by two mechanisms: (1) chemisorption on internal walls at low concentrations and (2) silicide precipitation at concentrations exceeding the solid solubility. Experiments utilizing ion-beam analysis, cross-sectional transmission electron microscopy, and secondary ion mass spectrometry were performed to quantitatively characterize the gettering effects and to determine the free energies associated with the chemisorbed metal atoms as ... continued below

Physical Description

15 p.

Creation Information

Petersen, G.A.; Myers, S.M. & Follstaedt, D.M. September 1, 1996.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

We have recently completed studies which quantitatively characterize the ability of nanometer-size cavities formed by He ion implantation to getter detrimental metal impurities in Si. Cavity microstructures formed in Si by ion implantation of He and subsequent annealing have been found to capture metal impurities by two mechanisms: (1) chemisorption on internal walls at low concentrations and (2) silicide precipitation at concentrations exceeding the solid solubility. Experiments utilizing ion-beam analysis, cross-sectional transmission electron microscopy, and secondary ion mass spectrometry were performed to quantitatively characterize the gettering effects and to determine the free energies associated with the chemisorbed metal atoms as a function of temperature. Mathematical models utilizing these results have been developed to predict gettering behavior.

Physical Description

15 p.

Notes

OSTI as DE96015014

Source

  • IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE96015014
  • Report No.: SAND--96-0869C
  • Report No.: CONF-960994--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 369696
  • Archival Resource Key: ark:/67531/metadc678753

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • September 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • April 13, 2016, 2 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Petersen, G.A.; Myers, S.M. & Follstaedt, D.M. Gettering of transition metals by cavities in silicon formed by helium ion implantation, article, September 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc678753/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.