Interaction of cavities with misfit dislocations in SiGe/Si heterostructures

PDF Version Also Available for Download.

Description

Consequences of the strong, short-range attractive interaction between cavities and misfit dislocations are examined in SiGe/Si heterostructures. When He is implanted at the SiGe/Si interface, either in situ during epitaxial growth or by post-growth treatment, cavities form and locate on the misfit dislocation cores. The misfit dislocations are no longer straight lines extending over several microns, but form a network with jogs and intersections at the cavities. The He-implanted cavity layer enhances thermal relaxation of the strained alloy and may increase the achievable degree of relaxation by lowering dislocation energies.

Physical Description

13 p.

Creation Information

Follstaedt, D.M.; Myers, S.M.; Floro, J.A. & Lee, S.R. September 1, 1996.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Consequences of the strong, short-range attractive interaction between cavities and misfit dislocations are examined in SiGe/Si heterostructures. When He is implanted at the SiGe/Si interface, either in situ during epitaxial growth or by post-growth treatment, cavities form and locate on the misfit dislocation cores. The misfit dislocations are no longer straight lines extending over several microns, but form a network with jogs and intersections at the cavities. The He-implanted cavity layer enhances thermal relaxation of the strained alloy and may increase the achievable degree of relaxation by lowering dislocation energies.

Physical Description

13 p.

Notes

OSTI as DE96015015

Source

  • IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE96015015
  • Report No.: SAND--96-0879C
  • Report No.: CONF-960994--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 369690
  • Archival Resource Key: ark:/67531/metadc678535

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • September 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • April 13, 2016, 2:38 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Follstaedt, D.M.; Myers, S.M.; Floro, J.A. & Lee, S.R. Interaction of cavities with misfit dislocations in SiGe/Si heterostructures, article, September 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc678535/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.