A comparison of chilled DI water/ozone and CO{sub 2}-based supercritical fluids as replacements for photoresist-stripping solvents Metadata

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Title

  • Main Title A comparison of chilled DI water/ozone and CO{sub 2}-based supercritical fluids as replacements for photoresist-stripping solvents

Creator

  • Author: Rubin, J. B.
    Creator Type: Personal
  • Author: Davenhall, L. B.
    Creator Type: Personal
  • Author: Barton, J.
    Creator Type: Personal
  • Author: Taylor, C. M. V.
    Creator Type: Personal
    Creator Info: Los Alamos National Lab., NM (United States). Chemical Science and Technology Div.
  • Author: Tiefert, K.
    Creator Type: Personal
    Creator Info: Hewlett-Packard Co., Santa Clara, CA (United States)

Publisher

  • Name: Los Alamos National Laboratory
    Place of Publication: New Mexico
    Additional Info: Los Alamos National Lab., Chemical Science and Technology Div., NM (United States)

Date

  • Creation: 1998-10

Language

  • English

Description

  • Content Description: Part of the Hewlett Packard Components Group`s Product Stewardship program is the ongoing effort to investigate ways to eliminate or reduce as much as possible the use of chemical substances from manufacturing processes. Currently used techniques to remove hard-baked photoresists from semiconductor wafers require the use of inorganic chemicals or organic strippers and associated organic solvents. Environmental, health and safety, as well as cost considerations prompted the search for alternative, more environmentally-benign, and cost-effective solutions. Two promising, emerging technologies were selected for evaluation: the chilled DI water/ozone technique and supercritical fluids based on carbon dioxide (CO{sub 2}). Evaluating chilled DI water/ozone shows this process to be effective for positive photoresist removal, but may not be compatible with all metallization systems. Testing of a closed-loop CO{sub 2}-based supercritical CO{sub 2} Resist Remover, or SCORR, at Los Alamos, on behalf of Hewlett-packard, shows that this treatment process is effective in removing photoresists, and is fully compatible with commonly used metallization systems. In this paper, the authors present details on the testing programs conducted with both the chilled DI H{sub 2}O/ozone and SCORR treatment processes.
  • Physical Description: 8 p.

Subject

  • Keyword: Removal
  • STI Subject Categories: 42 Engineering Not Included In Other Categories
  • Keyword: Solvents
  • Keyword: Carbon Dioxide
  • Keyword: Microelectronic Circuits
  • STI Subject Categories: 32 Energy Conservation, Consumption, And Utilization
  • Keyword: Masking
  • Keyword: Material Substitution
  • Keyword: Water
  • Keyword: Ozone
  • Keyword: Manufacturing
  • Keyword: Supercritical Gas Extraction

Source

  • Conference: 23. international electronics manufacturing technology symposium, Austin, TX (United States), 20-22 Oct 1998

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE99002595
  • Report No.: LA-UR--98-3476
  • Report No.: CONF-9810140--
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 353176
  • Archival Resource Key: ark:/67531/metadc678471

Note

  • Display Note: OSTI as DE99002595