Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth

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Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. ... continued below

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8 p.

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Baca, Albert G.; Bartram, M.E.; Coltrin, M.E.; Crawford, M.H.; Han, J.; Missert, N. et al. January 11, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1{micro}m nucleation zones. Although emission is comprised of both UV ({approximately}365nm) and yellow ({approximately}550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines.

Physical Description

8 p.

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OSTI as DE00003253

Medium: P; Size: 8 pages

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  • Fall MRS Meeting 1998, Boston, MA (US), 11/30/1998--12/04/1998

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  • Report No.: SAND99-0082C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3253
  • Archival Resource Key: ark:/67531/metadc678394

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  • January 11, 1999

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  • July 25, 2015, 2:20 a.m.

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  • April 11, 2017, 7:07 p.m.

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Baca, Albert G.; Bartram, M.E.; Coltrin, M.E.; Crawford, M.H.; Han, J.; Missert, N. et al. Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth, article, January 11, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc678394/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.