A High-Intensity, RF Plasma-Sputter Negative Ion Source

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A high-intensity, plasma-sputter negative-ion source based on the use of RF power for plasma generation has been developed that can be operated in either pulsed or dc modes. The source utilizes a high-Q, self-igniting, inductively coupled antenna system, operating at 80 MHz that has been optimized to generate Cs-seeded plasmas at low pressures (typically, <1 mTorr for Xe). The source is equipped with a 19-mm diameter spherical-sector cathode machined from the desired material. To date, the source has been utilized to generate dc negative-ion beams from a variety of species, including: C{sup {minus}}(610 {micro}A); F{sup {minus}}(100 {micro}A); Si{sup {minus}}(500 {micro}A); ... continued below

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11 p.

Creation Information

Alton, G.D.; Bao, Y.; Cui, B.; Lohwasser, R.; Reed, C.A. & Zhang, T. March 2, 1999.

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Description

A high-intensity, plasma-sputter negative-ion source based on the use of RF power for plasma generation has been developed that can be operated in either pulsed or dc modes. The source utilizes a high-Q, self-igniting, inductively coupled antenna system, operating at 80 MHz that has been optimized to generate Cs-seeded plasmas at low pressures (typically, <1 mTorr for Xe). The source is equipped with a 19-mm diameter spherical-sector cathode machined from the desired material. To date, the source has been utilized to generate dc negative-ion beams from a variety of species, including: C{sup {minus}}(610 {micro}A); F{sup {minus}}(100 {micro}A); Si{sup {minus}}(500 {micro}A); S{sup {minus}}(500 {micro}A); P{sup {minus}}(125 {micro}A); Cl{sup {minus}}(200 {micro}A); Ni{sup {minus}}(150 {micro}A); Cu{sup {minus}}(230 {micro}A); Ge{sup {minus}}(125 {micro}A); As{sup {minus}}(100 {micro}A); Se{sup {minus}}(200 {micro}A); Ag{sup {minus}}(70 {micro}A); Pt{sup {minus}}(125 {micro}A); Au{sup {minus}}(250 {micro}A). The normalized emittance {var_epsilon}{sub n} of the source at the 80% contour is: {var_epsilon}{sub n} = 7.5 mm.mrad.(MeV){sup 1/2}. The design principles of the source, operational parameters, ion optics, emittance and intensities for a number of negative-ion species will be presented in this report.

Physical Description

11 p.

Notes

INIS; OSTI as DE00003735

Medium: P; Size: 11 pages

Source

  • 8th International Conference on Heavy Ion Accelerator Technology, Argonne, IL (US), 10/05/1998--10/09/1998

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  • Report No.: ORNL/CP-101359
  • Report No.: KB 04 02 01 0
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 3735
  • Archival Resource Key: ark:/67531/metadc678381

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • March 2, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 6, 2017, 7:37 p.m.

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Alton, G.D.; Bao, Y.; Cui, B.; Lohwasser, R.; Reed, C.A. & Zhang, T. A High-Intensity, RF Plasma-Sputter Negative Ion Source, article, March 2, 1999; Tennessee. (digital.library.unt.edu/ark:/67531/metadc678381/: accessed July 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.