Novel Mid-Infrared Lasers With Compressively Strained InAsSb Active Regions Page: 1 of 9
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NOVEL MID-INFRARED LASERS WITH COMPRESSIVELY STRAINED InAsSb
ACTIVE REGIONS
S. R. Kurtz, R. M. Biefeld, and A. A. Allerman
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
ABSTRACT
Mid-infrared lasers grown by MOCVD with AlAsSb claddings and strained InAsSb
active regions are reported. A 3.8-3.9 gm injection laser with a pseudomorphic InAsSb
multiple quantum well active region lased at 210 K under pulsed operation. A semi-metal
layer acts as an internal electron source for the injection laser. An optically pumped laser with
an InAsSb/InAsP strained-layer superlattice active region was demonstrated at 3.7 pm, 240 K.
INTRODUCTION
Driven by chemical sensing and infrared countermeasure applications, several mid-
infrared (2-6 gm) diode lasers with strained InAsSb active regions have been recently
demonstrated. Devices with A1AsSb claddings have been grown by molecular-beam
epitaxy,[1,2] and metal organic chemical vapor deposition (MOCVD) lasers with higher index,
InPSb claddings have also been reported. [3,4] Although AlAsSb claddings provide superior
optical confinement, the large conduction band barriers associated with AIAsSb layers can
result in poor electron injection and high turn-on voltages. Also, due to lack of satisfactory
aluminum sources and residual carbon resulting in p-type doping qf AlSb alloys, MOCVD
growth of AIAsSb injection devices had not been reported. In this paper, we report the first
MOCVD grown lasers with AIAsSb claddings. First, we describe an electrically injected
device which utilizes a GaAsSb (p) / InAs (n) heterojunction to form an internal, semi-metal
layer. The semi-metal acts as an internal electron source which can eliminate many of the
problems associated with electron injection in these devices, and this novel device is compatible
with MOCVD materials and background dopings. Furthermore, the use of an internal electron
source enables us to consider alternative laser and LED designs that would not be feasible with
conventional, bipolar devices. Initial results for an optically pumped laser with an
InAsSb/InAsP strained-layer superlattice (SLS) active region also are presented. Due to a large
valence band offset, the light-heavy hole splitting in InAsSb/InAsP SLSs is estimated to be
80 meV, and Auger recombination should be further reduced in this active region.
SEMI-METAL INJECTION LASER WITH PSEUDOMORPHIC InAsSb
MULTIPLE QUANTUM WELL ACTIVE REGION
The band alignments [5] for the MOCVD grown, injection laser are shown in Figure 1. As
confirmed by x-ray measurements, both the claddings and active region of the laser are nominally
lattice matched to the substrate. Following a GaAs09Sb91 buffer, a 2.5 micron thick
AlAs0 16Sb0 84 cladding is grown on an n-type, InAs substrate. A 200A, GaAs0 0,Sbog layer lies
between the bottom cladding and a 0.6 Jm thick InAs active region containing 10, pseudomorphic
InAs088Sb012 quantum wells, each 90A thick. A 2.5 gm thick AlAs0 16Sb084 cladding followed by
a 200A, GaAs00,Sbo91 contact and oxidation barrier layer is grown on top of the active region.
AlAsSb and GaAsSb alloys have p-type background doping levels of = 1017 /cm3, estimated from
Hall measurements. The background doping of the InAs/InAsSb active region is n-type, = 1015-
1016/cm3. Details of the MOCVD growth are published elsewhere.[6,7]
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Kurtz, S. R.; Biefeld, R. M. & Allerman, A. A. Novel Mid-Infrared Lasers With Compressively Strained InAsSb Active Regions, article, February 1, 1997; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc678334/m1/1/: accessed March 29, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.