Insitu-Impregnated Capacitor for Pulse-Discharge Applications

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Description

Capacitor designs for DOE and/or DoD applications are now driven by two major factors; first, the need to reduce component volumes (attain higher energy density) to permit inclusion of additional components and/ or sensors in systems and second, the continuing budget constraints. The reduced volume and cost must be achieved with no sacrifices in functionality, reliability and safety. Since this study was initiated, we have seen a general, continuous increase in resulting short-time breakdown (STB) values, with particular improvements noted on thermal cycled capacitors. Process and results support our prediction that a 50Y0-650A volume reduction can be achieved with no ... continued below

Creation Information

Brooks, R.A.; Harris, J.O. & Pollard, J.R. January 15, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

Capacitor designs for DOE and/or DoD applications are now driven by two major factors; first, the need to reduce component volumes (attain higher energy density) to permit inclusion of additional components and/ or sensors in systems and second, the continuing budget constraints. The reduced volume and cost must be achieved with no sacrifices in functionality, reliability and safety. Since this study was initiated, we have seen a general, continuous increase in resulting short-time breakdown (STB) values, with particular improvements noted on thermal cycled capacitors. Process and results support our prediction that a 50Y0-650A volume reduction can be achieved with no reduction in performance and reliability.

Source

  • Capacitor and Resistor Technology Symposium - 1999; New Orleans, LA; 03/15-19/1999

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Identifier

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  • Other: DE00003255
  • Report No.: SAND99-0087C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3255
  • Archival Resource Key: ark:/67531/metadc678304

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Creation Date

  • January 15, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • Nov. 29, 2016, 3:58 p.m.

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Brooks, R.A.; Harris, J.O. & Pollard, J.R. Insitu-Impregnated Capacitor for Pulse-Discharge Applications, article, January 15, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc678304/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.