Bulk crystal growth of antimonide based III-V compounds for thermophotovoltaics applications

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In this paper, the bulk growth of crack-free GaInSb and single phase GaInAsSb alloys are presented. A new class of III-V quasi-binary [A{sub III}B{sub V}]{sub 12{minus}x}[C{sub III}D{sub V}]{sub x} semiconductor alloys has been synthesized and bulk crystals grown from the melt for the first time. The present investigation is focused on the quasi-binary alloy (GaSb){sub 1{minus}x}(InAs){sub x} (0 < x < 0.05) due to its importance for thermophotovoltaic applications. The structural properties of this melt-grown quasi-binary alloy are found to be significantly different from the conventional quaternary compound Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} with composition x = y. Synthesis and ... continued below

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9 p.

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Dutta, P.S.; Ostrogorsky, A.G. & Gutmann, R.J. October 1, 1998.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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In this paper, the bulk growth of crack-free GaInSb and single phase GaInAsSb alloys are presented. A new class of III-V quasi-binary [A{sub III}B{sub V}]{sub 12{minus}x}[C{sub III}D{sub V}]{sub x} semiconductor alloys has been synthesized and bulk crystals grown from the melt for the first time. The present investigation is focused on the quasi-binary alloy (GaSb){sub 1{minus}x}(InAs){sub x} (0 < x < 0.05) due to its importance for thermophotovoltaic applications. The structural properties of this melt-grown quasi-binary alloy are found to be significantly different from the conventional quaternary compound Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} with composition x = y. Synthesis and growth procedures are discussed. For the growth of ternary alloys, it was demonstrated that forced convection or mixing in the melt during directional solidification of In{sub x}Ga{sub 1{minus}x}Sb (0 < x < 0.1) significantly reduces cracks in the crystals.

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9 p.

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OSTI as DE99001631

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  • 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998

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  • Other: DE99001631
  • Report No.: KAPL-P--000116
  • Report No.: K--98158;CONF-981055--
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 307869
  • Archival Resource Key: ark:/67531/metadc678291

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  • October 1, 1998

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  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 12:34 p.m.

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Dutta, P.S.; Ostrogorsky, A.G. & Gutmann, R.J. Bulk crystal growth of antimonide based III-V compounds for thermophotovoltaics applications, article, October 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc678291/: accessed September 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.