Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy

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In{sub 0.2}Ga{sub 0.8}Sb epitaxial layers and thermophotovoltaic (TPV) device structures have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). Control of the n-type doping up to 1 {times} 10{sup 18} cm{sup {minus}3} was achieved using diethyltellurium (DETE) as the dopant source. A Hall mobility of greater than 8,000 cm{sup 2}/Vs at 77 K was obtained for a 3 {times} 10{sup 17} cm{sup {minus}3} doped In{sub 0.2}Ga{sub 0.8}Sb layer grown on high-resistivity GaSb substrate. The In{sub 0.2}Ga{sub 0.8}Sb epilayers directly grown on GaSb substrates were tilted with respect to the substrates, with the amount of tilt ... continued below

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11 p.

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Ehsani, H.; Bhat, I.; Hitchcock, C.; Gutmann, R.; Charache, G. & Freeman, M. May 1, 1997.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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In{sub 0.2}Ga{sub 0.8}Sb epitaxial layers and thermophotovoltaic (TPV) device structures have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). Control of the n-type doping up to 1 {times} 10{sup 18} cm{sup {minus}3} was achieved using diethyltellurium (DETE) as the dopant source. A Hall mobility of greater than 8,000 cm{sup 2}/Vs at 77 K was obtained for a 3 {times} 10{sup 17} cm{sup {minus}3} doped In{sub 0.2}Ga{sub 0.8}Sb layer grown on high-resistivity GaSb substrate. The In{sub 0.2}Ga{sub 0.8}Sb epilayers directly grown on GaSb substrates were tilted with respect to the substrates, with the amount of tilt increasing with the layer thickness. Transmission electron microscopy (TEM) studies of the layers showed the presence of dislocation networks across the epilayers parallel to the interface at different distances from the interface, but the layers above this dislocation network were virtually free of dislocations. A strong correlation between epilayer tilt and TPV device properties was found, with layers having more tilt providing better devices. The results suggest that the dislocations moving parallel to the interface cause lattice tilt, and control of this layer tilt may enable the fabrication of better quality device structures.

Physical Description

11 p.

Notes

OSTI as DE99001907

Source

  • 3. NREL conference on thermophotovoltaic (TPV) generation of electricity, Colorado Springs, CO (United States), 18-21 May 1997

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  • Other: DE99001907
  • Report No.: KAPL-P--000173
  • Report No.: K--97057;CONF-9705119--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/319849 | External Link
  • Office of Scientific & Technical Information Report Number: 319849
  • Archival Resource Key: ark:/67531/metadc678244

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  • May 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 18, 2016, 2:37 p.m.

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Ehsani, H.; Bhat, I.; Hitchcock, C.; Gutmann, R.; Charache, G. & Freeman, M. Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy, report, May 1, 1997; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc678244/: accessed April 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.