Formation of cavities in Si and their chemisorption of metals

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Nanometer-size cavities formed in Si by He{sup +} implantation and annealing are examined with cross-section TEM. During annealing at 700 C or above, He degasses from the specimens, leaving uhv cavities with reactive Si bonds on their walls. Cavity microstructures have been characterized in detail for an implanted fluence of 1 {times} 10{sup 17} He/cm{sup 2}: cavity volume remains approximately constant (0.75 lattice sites/He) for anneals from 700 to {approximately}1000 C, while surface area (3 to 7 times the wafer area) decreases with temperature as the cavities coarsen. The cavities are found to getter up to {approximately}1 monolayer of Cu ... continued below

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7 p.

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Follstaedt, D.M. & Myers, S.M. December 31, 1994.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Nanometer-size cavities formed in Si by He{sup +} implantation and annealing are examined with cross-section TEM. During annealing at 700 C or above, He degasses from the specimens, leaving uhv cavities with reactive Si bonds on their walls. Cavity microstructures have been characterized in detail for an implanted fluence of 1 {times} 10{sup 17} He/cm{sup 2}: cavity volume remains approximately constant (0.75 lattice sites/He) for anneals from 700 to {approximately}1000 C, while surface area (3 to 7 times the wafer area) decreases with temperature as the cavities coarsen. The cavities are found to getter up to {approximately}1 monolayer of Cu or Au from solution in Si without second-phase formation, thus identifying the trapping mechanism as chemisorption on the cavity walls.

Physical Description

7 p.

Notes

INIS; OSTI as DE95009586

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  • 9. international conference on microscopy of semiconducting materials, Oxford (United Kingdom), 20-23 Mar 1995

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  • Other: DE95009586
  • Report No.: SAND--94-3247C
  • Report No.: CONF-9503125--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 39703
  • Archival Resource Key: ark:/67531/metadc678083

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  • December 31, 1994

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 14, 2016, 3:55 p.m.

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Follstaedt, D.M. & Myers, S.M. Formation of cavities in Si and their chemisorption of metals, article, December 31, 1994; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc678083/: accessed December 13, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.