GaAs Self-Aligned JFETS with Carbon-Doped P+ Region

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Self-aligned JFETs with a carbon-doped p{sup +} region have been reported for the first time. For these JFETs, both the channel and p{sup +} region were grown by metal organic chemical vapor deposition (MOCVD) and are termed epitaxial JFETs in this study. The epitaxial JFETs were compared to ion implanted JFETs of similar channel doping and threshold voltage. Both JFETs were fabricated using the same self-aligned process for doping the source and drain regions of the JFET and for eliminating excess gate capacitance of conventional JFETs. The gate turn-on voltage for the epitaxial JFETs was 1.06 V, about 0.1 V ... continued below

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8 p.

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Allerman, A.A.; Baca, A.G.; Chang, P.C. & Drummond, T.J. February 15, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Self-aligned JFETs with a carbon-doped p{sup +} region have been reported for the first time. For these JFETs, both the channel and p{sup +} region were grown by metal organic chemical vapor deposition (MOCVD) and are termed epitaxial JFETs in this study. The epitaxial JFETs were compared to ion implanted JFETs of similar channel doping and threshold voltage. Both JFETs were fabricated using the same self-aligned process for doping the source and drain regions of the JFET and for eliminating excess gate capacitance of conventional JFETs. The gate turn-on voltage for the epitaxial JFETs was 1.06 V, about 0.1 V higher than for the implanted JFETs. The reverse breakdown voltage was similar for both JFETs but the reverse gate leakage current of the epitaxial JFETs was 1-3 orders of magnitude less than the implanted JFETs. The epitaxial JFETs also showed higher transconductance and lower knee voltage than the implanted JFETs.

Physical Description

8 p.

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OSTI as DE00003593

Medium: P; Size: 8 pages

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  • 195th Meeting of the Electrochemical Society, Seattle, WA (US), 05/02/1999--05/07/1999

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  • Report No.: SAND98-2854C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3593
  • Archival Resource Key: ark:/67531/metadc677947

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  • February 15, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 11, 2017, 6:38 p.m.

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Allerman, A.A.; Baca, A.G.; Chang, P.C. & Drummond, T.J. GaAs Self-Aligned JFETS with Carbon-Doped P+ Region, article, February 15, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc677947/: accessed October 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.