Silicon as the P-type dopant in GaSb and Ga{sub 0.8}In{sub 0.2}Sb grown by metalorganic vapor phase epitaxy Metadata
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Title
- Main Title Silicon as the P-type dopant in GaSb and Ga{sub 0.8}In{sub 0.2}Sb grown by metalorganic vapor phase epitaxy
Creator
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Author: Ehsani, H.Creator Type: Personal
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Author: Bhat, I.Creator Type: Personal
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Author: Hitchcock, C. Gutmann, R.J.Creator Type: PersonalCreator Info: Rensselaer Polytechnic Inst., Troy, NY (United States)
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Author: Charache, G.Creator Type: Personal
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Author: Freeman, M.Creator Type: PersonalCreator Info: Lockheed Martin Corp., Schenectady, NY (United States)
Contributor
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Sponsor: United States. Office of the Assistant Secretary for Nuclear Energy.Contributor Type: OrganizationContributor Info: USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
Publisher
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Name: Knolls Atomic Power LaboratoryPlace of Publication: Schenectady, New YorkAdditional Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
Date
- Creation: 1998-06-01
Language
- English
Description
- Content Description: P-type GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane as the doping precursor. Hall measurements show that the concentration and mobility of holes in GaSb and Ga{sub 0.8}In{sub 0.2}Sb are higher when the layers are grown on GaSb substrates than when grown on GaAs substrates. Secondary ion mass spectroscopy (SIMS) results show that the incorporation of Si is higher when GaSb substrates are used. The compensation of Si acceptors is negligible in GaSb, but is as high as 25% in Ga{sub 0.8}In{sub 0.2}Sb.
- Physical Description: 18 p.
Subject
- Keyword: Silicon
- STI Subject Categories: 36 Materials Science
- Keyword: Indium Antimonides
- Keyword: Doped Materials
- Keyword: Vapor Phase Epitaxy
- Keyword: Hall Effect
- Keyword: Hole Mobility
- Keyword: Experimental Data
- Keyword: Gallium Antimonides
- Keyword: Semiconductor Materials
- Keyword: Electrical Properties
Source
- Conference: 9. international conference on MOVPE, La Jolla, CA (United States), 30 May - 4 Jun 1998
Collection
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Name: Office of Scientific & Technical Information Technical ReportsCode: OSTI
Institution
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Name: UNT Libraries Government Documents DepartmentCode: UNTGD
Resource Type
- Report
Format
- Text
Identifier
- Other: DE99001571
- Report No.: KAPL-P--000084
- Report No.: K--98074;CONF-9805146--
- Grant Number: AC12-76SN00052
- DOI: 10.2172/307975
- Office of Scientific & Technical Information Report Number: 307975
- Archival Resource Key: ark:/67531/metadc677712
Note
- Display Note: OSTI as DE99001571