Comprehensive research on the stability and electronic properties of a-Si:H and a-SiGe:H alloys and devices. Final subcontract report, 10 March 1991--30 August 1994

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This report describes work on the growth of a-Si:H and a-(Si,Ge):H materials and devices using well-controlled growth techniques. The a-Si:H materials were grown at higher temperatures (300{degrees}-375{degrees}C) using electron-cyclotron-resonance (ECR) plasma techniques with a remote H beam. These films have excellent electronic quality and show significant improvements in stability compared with glow-discharge-produced a-Si:H materials. Several problems were encountered during the fabrication of devices in these materials, and we were able to overcome them by a systematic work on buffer layers in these cells. We also studied alternative designs for improving the stability of a-Si:H cells and produced graded-gap a-Si:H cells ... continued below

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108 p.

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Dalal, V. April 1, 1995.

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  • Dalal, V. Iowa State Univ. of Science and Technology, Ames, IA (United States)

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Description

This report describes work on the growth of a-Si:H and a-(Si,Ge):H materials and devices using well-controlled growth techniques. The a-Si:H materials were grown at higher temperatures (300{degrees}-375{degrees}C) using electron-cyclotron-resonance (ECR) plasma techniques with a remote H beam. These films have excellent electronic quality and show significant improvements in stability compared with glow-discharge-produced a-Si:H materials. Several problems were encountered during the fabrication of devices in these materials, and we were able to overcome them by a systematic work on buffer layers in these cells. We also studied alternative designs for improving the stability of a-Si:H cells and produced graded-gap a-Si:H cells using glow-discharge that are more stable than comparable standard, ungraded glow discharge devices. Finally, systematic work was done to produce good-quality a-(Si,Ge):H films, using triode radio frequency (RF) glow-discharge with ion bombardment during growth. Diagnostic devices were made using these films, and the properties of the material, such as Urbach energies and hole mobility-lifetime products, were measured in these devices. We found a systematic increase in the Urbach energies, and a corresponding decrease in the hole and electron {mu}{tau} products, as the Ge content of the alloys increases.

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108 p.

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OSTI as DE95004088

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  • Other Information: PBD: Apr 1995

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  • Other: DE95004088
  • Report No.: NREL/TP--411-7695
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/48752 | External Link
  • Office of Scientific & Technical Information Report Number: 48752
  • Archival Resource Key: ark:/67531/metadc677662

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  • April 1, 1995

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  • July 25, 2015, 2:21 a.m.

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  • March 31, 2016, 8:42 p.m.

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Dalal, V. Comprehensive research on the stability and electronic properties of a-Si:H and a-SiGe:H alloys and devices. Final subcontract report, 10 March 1991--30 August 1994, report, April 1, 1995; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc677662/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.