Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

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The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with ... continued below

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19 p.

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Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. & Charache, G.W. May 1, 1997.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Physical Description

19 p.

Notes

OSTI as DE99001954

Source

  • 3. NREL conference on thermophotovoltaic (TPV) generation of electricity, Colorado Springs, CO (United States), 18-21 May 1997

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  • Other: DE99001954
  • Report No.: KAPL-P--000176
  • Report No.: K--97063;CONF-9705119--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/325753 | External Link
  • Office of Scientific & Technical Information Report Number: 325753
  • Archival Resource Key: ark:/67531/metadc677558

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  • May 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 6:27 p.m.

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Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. & Charache, G.W. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices, report, May 1, 1997; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc677558/: accessed July 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.