Research on microwave joining of SiC

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Description

Results: identification of optimum joining temperature range for reaction bonded Si carbide at 1420-1500 C; demonstration that specimens joined within this range have fracture roughness greater than as-received material; and demonstration of ability to use SiC formed in situ from the decomposition of polycarbosilane as a joining aid for sintered Si carbide. In the latter case, the interlayer material was also shown to fill any pores in the joining specimens near the interlayer. Together with the demonstration of leaktight joints between tube sections of reaction bonded and sintered SiC under the previous contract, these results provide the foundation for scaleup ... continued below

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13 p.

Creation Information

Silberglitt, R. July 31, 1995.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Silberglitt, R. FM Technologies, Inc., Fairfax Station, VA (United States)

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Description

Results: identification of optimum joining temperature range for reaction bonded Si carbide at 1420-1500 C; demonstration that specimens joined within this range have fracture roughness greater than as-received material; and demonstration of ability to use SiC formed in situ from the decomposition of polycarbosilane as a joining aid for sintered Si carbide. In the latter case, the interlayer material was also shown to fill any pores in the joining specimens near the interlayer. Together with the demonstration of leaktight joints between tube sections of reaction bonded and sintered SiC under the previous contract, these results provide the foundation for scaleup to joining of the larger and longer tubes needed for radiant burner and heat exchanger tube assemblies. The formation of SiC in situ is important because maintaining roundness of these large tubes is a technical challenge for the tube manufacturer, so that formation of a leaktight joint may require some degree of gap filling.

Physical Description

13 p.

Notes

OSTI as DE97002600

Source

  • Other Information: PBD: 31 Jul 1995

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  • Other: DE97002600
  • Report No.: LA-SUB--95-192-Pt.1
  • Grant Number: W-7405-ENG-36
  • DOI: 10.2172/432457 | External Link
  • Office of Scientific & Technical Information Report Number: 432457
  • Archival Resource Key: ark:/67531/metadc677507

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Creation Date

  • July 31, 1995

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • July 28, 2016, 7:24 p.m.

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Silberglitt, R. Research on microwave joining of SiC, report, July 31, 1995; New Mexico. (digital.library.unt.edu/ark:/67531/metadc677507/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.