Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy

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N-type Ga{sub 0.8}In{sub 0.2}Sb epitaxial layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using diethyltelluride (DETe) as the dopant source. The incorporation efficiency of Te in Ga{sub 0.8}In{sub 0.2}Sb and the electron mobility were found to be higher with GaSb substrates compared to using GaAs substrates. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron ... continued below

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18 p.

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Ehsani, H.; Bhat, I.; Hitchcock, C.; Gutmann, R.J.; Charache, G. & Freeman, M. June 1, 1998.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

N-type Ga{sub 0.8}In{sub 0.2}Sb epitaxial layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using diethyltelluride (DETe) as the dopant source. The incorporation efficiency of Te in Ga{sub 0.8}In{sub 0.2}Sb and the electron mobility were found to be higher with GaSb substrates compared to using GaAs substrates. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.

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18 p.

Notes

OSTI as DE99001570

Source

  • 9. international conference on MOVPE, La Jolla, CA (United States), 30 May - 4 Jun 1998

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  • Other: DE99001570
  • Report No.: KAPL-P--000085
  • Report No.: K--98075;CONF-9805146--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/307974 | External Link
  • Office of Scientific & Technical Information Report Number: 307974
  • Archival Resource Key: ark:/67531/metadc677325

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  • June 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 18, 2016, 2:34 p.m.

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Ehsani, H.; Bhat, I.; Hitchcock, C.; Gutmann, R.J.; Charache, G. & Freeman, M. Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy, report, June 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc677325/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.