Ion implantation of silicon nitride ball bearings

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Hypothesis for ion implantation effect was that stress concentrations reflected into the bulk due to topography such as polishing imperfections, texture in the race, or transferred material, might be reduced due to surface amorphization. 42 control samples were tested to an intended runout period of 60 h. Six ion implanted balls were tested to an extended period of 150 h. Accelerated testing was done in a V groove so that wear was on two narrow wear tracks. Rutherford backscattering, XRPS, profilometry, optical microscopy, nanoindentation hardness, and white light interferometry were used. The balls were implanted with 150-keV C ions at ... continued below

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17 p.

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Williams, J.M. & Miner, J.R. September 1, 1996.

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  • Williams, J.M. Oak Ridge National Lab., TN (United States)
  • Miner, J.R. United Technologies, Pratt and Whitney, West Palm Beach, FL (United States)

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Description

Hypothesis for ion implantation effect was that stress concentrations reflected into the bulk due to topography such as polishing imperfections, texture in the race, or transferred material, might be reduced due to surface amorphization. 42 control samples were tested to an intended runout period of 60 h. Six ion implanted balls were tested to an extended period of 150 h. Accelerated testing was done in a V groove so that wear was on two narrow wear tracks. Rutherford backscattering, XRPS, profilometry, optical microscopy, nanoindentation hardness, and white light interferometry were used. The balls were implanted with 150-keV C ions at fluence 1.1x10{sup 17}/cm{sup 2}. The samples had preexisting surface defects (C-cracks), so the failure rate of the control group was unacceptable. None of the ion-implanted samples failed in 150 h of testing. Probability of randomly selecting 6 samples from the control group that would perform this well is about 5%, so there is good probability that ion implantation improved performance. Possible reasons are discussed. Wear tracks, microstructure, and impurity content were studied in possible relation to C-cracks.

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17 p.

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OSTI as DE96015235

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  • IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996

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  • Other: DE96015235
  • Report No.: CONF-960994--6
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 381684
  • Archival Resource Key: ark:/67531/metadc677296

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  • September 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Jan. 22, 2016, 11:44 a.m.

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Williams, J.M. & Miner, J.R. Ion implantation of silicon nitride ball bearings, article, September 1, 1996; Tennessee. (digital.library.unt.edu/ark:/67531/metadc677296/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.