Metal contacts on ZnSe and GaN

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Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial ... continued below

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186 p.

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Duxstad, K.J. May 1, 1997.

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  • Duxstad, K.J. Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

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Description

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

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186 p.

Notes

OSTI as DE97006643

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  • Other Information: TH: Thesis (Ph.D.)

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  • Other: DE97006643
  • Report No.: LBNL--40300
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 491565
  • Archival Resource Key: ark:/67531/metadc677278

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 1, 1997

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  • July 25, 2015, 2:21 a.m.

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  • April 5, 2016, 5:02 p.m.

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Duxstad, K.J. Metal contacts on ZnSe and GaN, thesis or dissertation, May 1, 1997; California. (digital.library.unt.edu/ark:/67531/metadc677278/: accessed December 10, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.