Production data on 0.55 eV InGaAs thermophotovoltaic cells

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Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum ... continued below

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12 p.

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Wojtzuk, S.; Colter, P.; Charache, G. & Campbell, B. May 1, 1996.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss.

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12 p.

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OSTI as DE99000444

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  • 25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996

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  • Other: DE99000444
  • Report No.: KAPL-P--000045
  • Report No.: CONF-960513--
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 296645
  • Archival Resource Key: ark:/67531/metadc677189

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  • May 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • May 18, 2016, 2:46 p.m.

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Wojtzuk, S.; Colter, P.; Charache, G. & Campbell, B. Production data on 0.55 eV InGaAs thermophotovoltaic cells, article, May 1, 1996; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc677189/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.