Effect of High-Voltage Heterojunction Bipolar Transistor Collector Design on f(T) and f(MAX)

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High-speed InGaP/GaAs heterojunction bipolar transistors (HBTs) for high-voltage circuit applications have been investigated. In order to obtain ideal IV characteristics, a lightly doped (N{sub DC} = 7.5 x 10{sup 15} cm{sup {minus}3}) thick (W{sub C} = 3.5 {micro}m) layer of GaAs was used as the collector layer. The devices fabricated have shown breakdown voltage exceeding 65 V. Device operated at up to a 60V bias, which is the highest operating voltage reported up to date for single heterojunction HBTs. Peak {line_integral}{sub T} and {line_integral}{sub MAX} values of 18 GHz and 29 GHz, respectively, have been achieved on a device with ... continued below

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11 p.

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Ashby, C.I.H.; Baca, A.G.; Chang, P.C. & Hietala, V.M. March 2, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 22 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

High-speed InGaP/GaAs heterojunction bipolar transistors (HBTs) for high-voltage circuit applications have been investigated. In order to obtain ideal IV characteristics, a lightly doped (N{sub DC} = 7.5 x 10{sup 15} cm{sup {minus}3}) thick (W{sub C} = 3.5 {micro}m) layer of GaAs was used as the collector layer. The devices fabricated have shown breakdown voltage exceeding 65 V. Device operated at up to a 60V bias, which is the highest operating voltage reported up to date for single heterojunction HBTs. Peak {line_integral}{sub T} and {line_integral}{sub MAX} values of 18 GHz and 29 GHz, respectively, have been achieved on a device with emitter area of 4x 12.5 {micro}m{sup 2}. Both {line_integral}{sub T} and {line_integral}{sub Max} degrades with higher bias, which is related to the elongation of the collector depletion width.

Physical Description

11 p.

Notes

OSTI as DE00004236

Medium: P; Size: 11 pages

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  • State of the Art Programs on Compound Semiconductors, Seattle, WA (US), 05/03/1999--05/07/1999

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  • Report No.: SAND99-0520C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 4236
  • Archival Resource Key: ark:/67531/metadc676932

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  • March 2, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 6, 2017, 7:29 p.m.

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Ashby, C.I.H.; Baca, A.G.; Chang, P.C. & Hietala, V.M. Effect of High-Voltage Heterojunction Bipolar Transistor Collector Design on f(T) and f(MAX), article, March 2, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc676932/: accessed September 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.