InGaAs monolithic interconnected modules (MIM)

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A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs with ... continued below

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12 p.

Creation Information

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr.; Wilt, D.M.; Scheiman, D. et al. December 31, 1997.

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  • Bettis Atomic Power Laboratory
    Publisher Info: Bettis Atomic Power Lab., West Mifflin, PA (United States)
    Place of Publication: West Mifflin, Pennsylvania

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Description

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs with an active area of 1 x 1-cm were comprised of 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were produced, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74-eV modules demonstrated an open-circuit voltage (Voc) of 6.158 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 842 mA/cm{sup 2}, under flashlamp testing. The 0.55-eV modules demonstrated a Voc of 4.849 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. IR reflectance measurements (i.e., {lambda} > 2 {micro}m) of these devices indicated a reflectivity of {ge} 83%. Latest electrical and optical performance results for the MIMs will be presented.

Physical Description

12 p.

Notes

OSTI as DE99000450

Source

  • 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997

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  • Other: DE99000450
  • Report No.: WAPD-T--3154
  • Report No.: CONF-970953--
  • Grant Number: AC11-93PN38195
  • DOI: 10.2172/296641 | External Link
  • Office of Scientific & Technical Information Report Number: 296641
  • Archival Resource Key: ark:/67531/metadc676887

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Creation Date

  • December 31, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 3:55 p.m.

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Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr.; Wilt, D.M.; Scheiman, D. et al. InGaAs monolithic interconnected modules (MIM), report, December 31, 1997; West Mifflin, Pennsylvania. (digital.library.unt.edu/ark:/67531/metadc676887/: accessed September 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.