Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb

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GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline ... continued below

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11 p.

Creation Information

Dutta, P.S.; Ostrogorsky, A.G. & Gutmann, R.J. May 1, 1997.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Physical Description

11 p.

Notes

OSTI as DE99001905

Source

  • 3. NREL conference on thermophotovoltaic (TPV) generation of electricity, Colorado Springs, CO (United States), 18-21 May 1997

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Identifier

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  • Other: DE99001905
  • Report No.: KAPL-P--000172
  • Report No.: K--97056;CONF-9705119--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/319839 | External Link
  • Office of Scientific & Technical Information Report Number: 319839
  • Archival Resource Key: ark:/67531/metadc676872

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • May 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 12:34 p.m.

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Dutta, P.S.; Ostrogorsky, A.G. & Gutmann, R.J. Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb, report, May 1, 1997; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc676872/: accessed June 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.