Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics

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Description

The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small ... continued below

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9 p.

Creation Information

Baca, A.G.; Chang, P.C.; Hietala, V.M. & Sloan, L.R. February 18, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small signal RF functions. Additionally, recent power efficiency measurements on InP HEMT devices for transmission are presented. This work focuses on the needs of today's typical portable Wireless systems, which operate at frequencies up to several GHz.

Physical Description

9 p.

Notes

OSTI as DE00003875

Medium: P; Size: 9 pages

Source

  • 195th Meeting of the Electrochemical Society, Seattle, WA (US), 05/02/1999--05/07/1999

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  • Report No.: SAND98-2815C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3875
  • Archival Resource Key: ark:/67531/metadc676604

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • February 18, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 11, 2017, 7:32 p.m.

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Baca, A.G.; Chang, P.C.; Hietala, V.M. & Sloan, L.R. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics, article, February 18, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc676604/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.