Spectroscopic ellipsometry characterization of thin-film silicon nitride

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We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup ... continued below

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17 p.

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Jellison, G.E. Jr.; Modine, F.A.; Doshi, P. & Rohatgi, A. May 1, 1997.

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We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

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17 p.

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OSTI as DE97006444

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  • 2. international conference on spectroscopic ellipsometry (ICSE-2), Charleston, SC (United States), 12-15 May 1997

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  • Other: DE97006444
  • Report No.: CONF-9705124--2
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 486036
  • Archival Resource Key: ark:/67531/metadc676360

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  • May 1, 1997

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  • July 25, 2015, 2:21 a.m.

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  • Jan. 22, 2016, 4:41 p.m.

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Jellison, G.E. Jr.; Modine, F.A.; Doshi, P. & Rohatgi, A. Spectroscopic ellipsometry characterization of thin-film silicon nitride, article, May 1, 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc676360/: accessed December 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.