Identifying electronic properties relevant to improving stability in a-Si:H-based cells and overall performance in a-Si,Ge:H-based cells. Annual subcontract report, 18 April 1995--17 April 1996

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The work done during this second phase of the University of Oregon`s NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si,Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, ... continued below

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31 p.

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Cohen, J.D. March 1, 1997.

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Description

The work done during this second phase of the University of Oregon`s NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si,Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H{sub 2} or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.

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31 p.

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OSTI as DE97000225

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  • Other Information: PBD: Mar 1997

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  • Other: DE97000225
  • Report No.: NREL/SR--520-22701
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/459363 | External Link
  • Office of Scientific & Technical Information Report Number: 459363
  • Archival Resource Key: ark:/67531/metadc676289

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  • March 1, 1997

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  • July 25, 2015, 2:21 a.m.

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  • March 31, 2016, 8:47 p.m.

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Cohen, J.D. Identifying electronic properties relevant to improving stability in a-Si:H-based cells and overall performance in a-Si,Ge:H-based cells. Annual subcontract report, 18 April 1995--17 April 1996, report, March 1, 1997; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc676289/: accessed December 10, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.