Characterization of an oxygen plasma process for cleaning packaged semiconductor devices. Final report

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Description

The purpose of this research was to experimentally determine the operating {open_quotes}window{close_quotes} for an oxygen plasma cleaning process to be used on microelectronics components just prior to wire bonding. The process was being developed to replace one that used vapor degreasing with trichlorotrifluoroethane, an ozone-depleting substance. A Box-Behnken experimental design was used to generate data from which the oxygen plasma cleaning process could be characterized. Auger electron spectrophotometry was used to measure the contamination thickness on the dice after cleaning. An empirical equation correlating the contamination thickness on the die surface with the operating parameters of the plasma system was ... continued below

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64 p.

Creation Information

Adams, B.E. November 1, 1996.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Allied-Signal Aerospace Company
    Publisher Info: Allied-Signal Aerospace Co., Kansas City, MO (United States). Kansas City Div.
    Place of Publication: Kansas City, Missouri

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Description

The purpose of this research was to experimentally determine the operating {open_quotes}window{close_quotes} for an oxygen plasma cleaning process to be used on microelectronics components just prior to wire bonding. The process was being developed to replace one that used vapor degreasing with trichlorotrifluoroethane, an ozone-depleting substance. A Box-Behnken experimental design was used to generate data from which the oxygen plasma cleaning process could be characterized. Auger electron spectrophotometry was used to measure the contamination thickness on the dice after cleaning. An empirical equation correlating the contamination thickness on the die surface with the operating parameters of the plasma system was developed from the collected Auger data, and optimum settings for cleaning semiconductor devices were determined. Devices were also tested for undesirable changes in electrical parameters resulting from cleaning in the plasma system. An increase in leakage current occurred for bipolar transistors and diodes after exposure to the oxygen plasma. Although an increase in leakage current occurred, each device`s parameter remained well below the acceptable specification limit. Based upon the experimental results, the optimum settings for the plasma cleaning process were determined to be 200 watts of power applied for five minutes in an enclosure maintained at 0.7 torr. At these settings, all measurable contamination was removed without compromising the reliability of the devices.

Physical Description

64 p.

Notes

OSTI as DE97050572

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  • Other Information: PBD: Nov 1996

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  • Other: DE97050572
  • Report No.: KCP--613-5798
  • Grant Number: AC04-76DP00613
  • DOI: 10.2172/416950 | External Link
  • Office of Scientific & Technical Information Report Number: 416950
  • Archival Resource Key: ark:/67531/metadc676242

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  • November 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Feb. 20, 2017, 3:04 p.m.

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Adams, B.E. Characterization of an oxygen plasma process for cleaning packaged semiconductor devices. Final report, report, November 1, 1996; Kansas City, Missouri. (digital.library.unt.edu/ark:/67531/metadc676242/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.